| PART |
Description |
Maker |
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| VMB70-12F |
NPN SILICON RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5V)(NPN 硅型射频功率晶体Ic:12 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5V))
|
Advanced Semiconductor, Inc.
|
| HF5-12F |
NPN SILICON RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| 2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE.
|
Continental Device India Limited
|
| CSD471G CSD471AO |
0.800W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 200 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 70 - 140 hFE
|
Continental Device India Limited
|
| 2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE.
|
Isahaya Electronics Corporation
|
| CMBT4401 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.600A Ic, 40 hFE. Complementary CMBT4403
|
Continental Device India Limited
|
| FY80 |
VEB WERK FUR FERNMELDEWESEN
|
List of Unclassifed Man...
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